Indium ion cementation onto aluminum plates in hydrochloric acid solutions: a kinetic perspective
Identifieur interne : 000097 ( Main/Repository ); précédent : 000096; suivant : 000098Indium ion cementation onto aluminum plates in hydrochloric acid solutions: a kinetic perspective
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Abstract
The cementation of indium on an aluminum plate in indium-bearing concentrated hydrochloric acid solutions has been performed over a period of 2 hr at 278, 298, 318, 328 and 338 K. Aluminum was selected for two reasons: (1) aluminum has significantly higher oxidation potential compared to indium and (2) the leaching of waste plasma display panels produces a significant concentration of aluminum ions in solution. The effect of the cementation variables was comprehensively investigated, and a preliminary kinetic analysis was made using first order kinetics with pertinent Arrhenius-type plots. The cementation process was highly temperature sensitive for the range of 298-338 K, and more than 96% of the indium was recovered at 338 K. For morphology and purity analysis, indium powders obtained from the cementation process were examined using various analytical tools, such as X-ray diffraction and scanning electron microscopy-energy dispersive X-ray spectrometry.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Indium ion cementation onto aluminum plates in hydrochloric acid solutions: a kinetic perspective</title><author><name>HYUN SEON HONG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE)</s1><s2>Yongin, Gyeonggi-do</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin, Gyeonggi-do</wicri:noRegion></affiliation></author><author><name>GEON HONG KIM</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE)</s1><s2>Yongin, Gyeonggi-do</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin, Gyeonggi-do</wicri:noRegion></affiliation></author><author><name>MYUNG HWAN HONG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE)</s1><s2>Yongin, Gyeonggi-do</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin, Gyeonggi-do</wicri:noRegion></affiliation></author><author><name>SUNGKYU LEE</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE)</s1><s2>Yongin, Gyeonggi-do</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin, Gyeonggi-do</wicri:noRegion></affiliation></author><author><name sortKey="Lee, Jae Chun" uniqKey="Lee J">Jae-Chun Lee</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Mineral Resources Research Division, Korea Institute of Geoscience and Mineral Resources</s1><s2>Daejeon</s2><s3>KOR</s3><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Daejeon</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0084732</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0084732 INIST</idno><idno type="RBID">Pascal:14-0084732</idno><idno type="wicri:Area/Main/Corpus">000080</idno><idno type="wicri:Area/Main/Repository">000097</idno></publicationStmt><seriesStmt><idno type="ISSN">1862-5282</idno><title level="j" type="abbreviated">Int. j. mater. res. </title><title level="j" type="main">International journal of materials research </title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Hydrochloric acid</term><term>Kinetics</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Acide chlorhydrique</term><term>Cinétique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The cementation of indium on an aluminum plate in indium-bearing concentrated hydrochloric acid solutions has been performed over a period of 2 hr at 278, 298, 318, 328 and 338 K. Aluminum was selected for two reasons: (1) aluminum has significantly higher oxidation potential compared to indium and (2) the leaching of waste plasma display panels produces a significant concentration of aluminum ions in solution. The effect of the cementation variables was comprehensively investigated, and a preliminary kinetic analysis was made using first order kinetics with pertinent Arrhenius-type plots. The cementation process was highly temperature sensitive for the range of 298-338 K, and more than 96% of the indium was recovered at 338 K. For morphology and purity analysis, indium powders obtained from the cementation process were examined using various analytical tools, such as X-ray diffraction and scanning electron microscopy-energy dispersive X-ray spectrometry.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1862-5282</s0></fA01><fA03 i2="1"><s0>Int. j. mater. res. </s0></fA03><fA05><s2>105</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Indium ion cementation onto aluminum plates in hydrochloric acid solutions: a kinetic perspective</s1></fA08><fA11 i1="01" i2="1"><s1>HYUN SEON HONG</s1></fA11><fA11 i1="02" i2="1"><s1>GEON HONG KIM</s1></fA11><fA11 i1="03" i2="1"><s1>MYUNG HWAN HONG</s1></fA11><fA11 i1="04" i2="1"><s1>SUNGKYU LEE</s1></fA11><fA11 i1="05" i2="1"><s1>LEE (Jae-Chun)</s1></fA11><fA14 i1="01"><s1>Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE)</s1><s2>Yongin, Gyeonggi-do</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Mineral Resources Research Division, Korea Institute of Geoscience and Mineral Resources</s1><s2>Daejeon</s2><s3>KOR</s3><sZ>5 aut.</sZ></fA14><fA20><s1>177-182</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>271</s2><s5>354000506120020070</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0084732</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>International journal of materials research </s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>The cementation of indium on an aluminum plate in indium-bearing concentrated hydrochloric acid solutions has been performed over a period of 2 hr at 278, 298, 318, 328 and 338 K. Aluminum was selected for two reasons: (1) aluminum has significantly higher oxidation potential compared to indium and (2) the leaching of waste plasma display panels produces a significant concentration of aluminum ions in solution. The effect of the cementation variables was comprehensively investigated, and a preliminary kinetic analysis was made using first order kinetics with pertinent Arrhenius-type plots. The cementation process was highly temperature sensitive for the range of 298-338 K, and more than 96% of the indium was recovered at 338 K. For morphology and purity analysis, indium powders obtained from the cementation process were examined using various analytical tools, such as X-ray diffraction and scanning electron microscopy-energy dispersive X-ray spectrometry.</s0></fC01><fC02 i1="01" i2="X"><s0>001D11A</s0></fC02><fC02 i1="02" i2="X"><s0>240</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Acide chlorhydrique</s0><s2>NK</s2><s5>55</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Hydrochloric acid</s0><s2>NK</s2><s5>55</s5></fC03><fC03 i1="01" i2="X" l="GER"><s0>Salzsaeure</s0><s2>NK</s2><s5>55</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Ácido chlorhídrico</s0><s2>NK</s2><s5>55</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Cinétique</s0><s5>56</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Kinetics</s0><s5>56</s5></fC03><fC03 i1="02" i2="X" l="GER"><s0>Kinetik</s0><s5>56</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Cinética</s0><s5>56</s5></fC03><fN21><s1>118</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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